Plasma Etching System-Suzhou Aptel Electronics Technology

Plasma Cleaner

Low Pressure Plasma System Atmospheric Plasma System Microwave Plasma Cleaner LED Packaging Plasma Cleaner Plasma Stripper Plasma Etching System

Adhesive

Epoxy Silicone Series PU Acrylate Silanization

Thermal Pad Thermal Conductive Gel Thermal Grease Thermal Conductive Insulator Phase Change Material Thermal And Wave Absorption Material EMI Shielding Material Thermal Potting Adhesive

Lubricant

Lubricating Oil Lubricating Grease Dry Film Lubricant

Cleaning Agent

Water-Based Cleaning Agent Semi-Aqueous Cleaning Agent Oil-Based Cleaning Agent Solvent Cleaning Agent

Release Agent

Rubber Composite PU Internal Release Agent Metal Die Casting Emerging Industry

Nanocoating

Organic Protective Film Organic Hydrophobic Film Functional Inorganic Film Functional Olefinic Carbon Film

Single-Component Dispensing System Two-Component Metering and Mixing System

Product Details

A core piece of equipment designed for nanoscale precision etching of materials such as semiconductors, metals, and ceramics. It generates plasma by exciting process gases (including CF₄, O₂, Ar, etc.) via radio frequency/microwave/ICP in a vacuum environment (10⁻³–10¹ Pa), and serves as a critical device for micro-nano processing and chip manufacturing.

It achieves directional, high-precision material removal through the dual effects of physical sputtering (high-energy ions bombard the material surface) and chemical etching (active free radicals react with the material to form volatile substances).

Vacuum System + Plasma Generation System (radio frequency/microwave/ICP) + Gas Supply System (multi-gas ratio control) + Reaction Chamber + High-Precision Control System (parameter error ≤ 0.1%)

Pattern transfer of semiconductor chips (post-lithography etching), structural forming of MEMS devices, pixel fabrication of display panels, texture etching of photovoltaic cells, TSV via processing for advanced packaging.

Nanoscale etching precision (line width ≤ 10 nm), excellent uniformity (error < 5%), high anisotropy (vertical etching ratio ≥ 20:1), dry and environmentally friendly processing (no chemical waste liquid), and compatibility with complex micro-nano structures.

ICP Type (Inductively Coupled Plasma): Features high plasma density and fast etching rate; it is the mainstream choice for high-end semiconductor manufacturing processes.
RIE Type (Reactive Ion Etching): Offers superior anisotropy, suitable for fine pattern etching.
Microwave Type: Enables low-damage and high-uniformity processing, suitable for etching photosensitive devices.

It focuses on precision material removal and structural forming rather than cleaning or photoresist stripping. Both etching depth and pattern precision are controllable, making it a core step for pattern transfer in chip manufacturing.